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Transcend TS1GSH64V6B memory module 8 GB 1 x 8 GB DDR4 2666 MHz1
Transcend TS1GSH64V6B memory module 8 GB 1 x 8 GB DDR4 2666 MHz1
Transcend TS1GSH64V6B memory module 8 GB 1 x 8 GB DDR4 2666 MHz2

Transcend TS1GSH64V6B memory module 8 GB 1 x 8 GB DDR4 2666 MHz

Transcend TS1GSH64V6B. Component for: Notebook, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19
Manufacturer: Transcend
SKU: 5641263
Manufacturer part number: TS1GSH64V6B
UPC: 0760557841753
$579.37
Transcend's DDR4 DRAM modules operate at a nominal voltage of just 1.2V, offering higher energy efficiency and exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.

 

  • JEDEC standard 1.2V ± 0.06V power supply
  • High energy efficiency
  • 8 bit pre-fetch
  • Burst Length: 4, 8
  • 16 Banks (4 Bank Groups)
  • Support DBI mode
  • Support Command/Address parity detection
  • Support Data Cyclic Redundancy Check (CRC) for improved data reliability
  • On-die termination with ODT pin Serial presence detect with EEPROM
  • 100% tested for stability, compatibility and performance
Transcend's DDR4 DRAM modules operate at a nominal voltage of just 1.2V, offering higher energy efficiency and exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.

 

  • JEDEC standard 1.2V ± 0.06V power supply
  • High energy efficiency
  • 8 bit pre-fetch
  • Burst Length: 4, 8
  • 16 Banks (4 Bank Groups)
  • Support DBI mode
  • Support Command/Address parity detection
  • Support Data Cyclic Redundancy Check (CRC) for improved data reliability
  • On-die termination with ODT pin Serial presence detect with EEPROM
  • 100% tested for stability, compatibility and performance

Products specifications

Attribute name Attribute value
Internal memory 8 GB
Internal memory type DDR4
Harmonized System (HS) code 84733020
Features
Memory clock speed 2666 MHz
Component for Notebook
Memory form factor 260-pin SO-DIMM
ECC N
CAS latency 19
Memory voltage 1.2 V
Memory layout (modules x size) 1 x 8 GB
Memory ranking 1
Module configuration 1024M x 8
Operational conditions
Operating temperature (T-T) 0 - 85 °C
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Products specifications

Attribute name Attribute value
Internal memory 8 GB
Internal memory type DDR4
Harmonized System (HS) code 84733020
Features
Memory clock speed 2666 MHz
Component for Notebook
Memory form factor 260-pin SO-DIMM
ECC N
CAS latency 19
Memory voltage 1.2 V
Memory layout (modules x size) 1 x 8 GB
Memory ranking 1
Module configuration 1024M x 8
Operational conditions
Operating temperature (T-T) 0 - 85 °C

Product tags

  • (52322)
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