V-NAND Technology Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 48 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint. TurboWrite Technology Samsung’s TurboWrite technology helps to maximize your computing ability. The 850 EVO delivers exceptionally high performance in sequential read (540MB/s) and write (520MB/s) speeds, as well as optimized random performance for high-end computing on client PCs. Rapid Mode Samsung’s Magician software provides a Rapid Mode for fast processing speeds on a system level by utilizing unused PC memory (DRAM) as cache storage, as well as high performance at various random queue depths. 5-Year Limited Warranty The 850 EVO offers endurance and reliability with a high TBW (Total Bytes Written), all backed by a 5-year limited warranty up to 150TBW. It also minimizes performance degradation over time, in order to provide sustained performance for business users.
Products specifications
Attribute name | Attribute value |
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Maximum read (4KB) | 98000 IOPS |
Maximum write (4KB) | 90000 IOPS |
Depth | 0.268" |
Weight | 1.94 oz |
Non-operating vibration | 20 G |
TBW rating | 150 |
Random read (4KB) | 10000 IOPS |
Memory type | MLC |
Read speed | 540 MB/s |
Write speed | 520 MB/s |
Random write (4KB) | 40000 IOPS |
Power consumption (read) | 3.1 W |
Power consumption (write) | 3.6 W |