Kingston Technology ValueRAM KVR26S19D8/16 memory module 16 GB 1 x 16 GB DDR4 2666 MHz

Kingston Technology ValueRAM KVR26S19D8/16. Component for: Notebook, Internal memory: 16 GB, Memory layout (modules x size): 1 x 16 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19
Manufacturer: Kingston Technology
Availability: Out of Stock - on backorder and will be dispatched once in stock.
SKU: 5216074
Manufacturer part number: KVR26S19D8/16
UPC: 0740617280623
$33.00
This document describes ValueRAM's KVR26S19D8/16 is a 2G x 64-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 2Rx8, non-ECC, memory module, based on sixteen 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers.

 

  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Low-power auto self refresh (LPASR)
  • Data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration
  • Dual-rank
  • On-board I2 serial presence-detect (SPD) EEPROM
  • 16 internal banks; 4 groups of 4 banks each
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Fly-by topology
  • Terminated control command and address bus
  • RoHS Compliant and Halogen-Fre
This document describes ValueRAM's KVR26S19D8/16 is a 2G x 64-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 2Rx8, non-ECC, memory module, based on sixteen 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers.

 

  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Low-power auto self refresh (LPASR)
  • Data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration
  • Dual-rank
  • On-board I2 serial presence-detect (SPD) EEPROM
  • 16 internal banks; 4 groups of 4 banks each
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Fly-by topology
  • Terminated control command and address bus
  • RoHS Compliant and Halogen-Fre
Products specifications
Attribute nameAttribute value
Row cycle time32 ns
Refresh row cycle time32 ns
Row active timeY
Width2.74"
Depth0.146"
Height1.18"
JEDEC standardY
Lead platingGold
Doesn't containHalogen
Programming power voltage (VPP)2.5 V
Design
CertificationUL 94 V-0
Technical details
Sustainability certificatesRoHS
Features
Internal memory16 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
CAS latency19
Memory voltage1.2 V
Memory layout (modules x size)1 x 16 GB
Memory ranking2
Linux operating systems supportedY
Module configuration2048M x 64
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
System requirements
Windows operating systems supportedY
Mac operating systems supportedY
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Products specifications
Attribute nameAttribute value
Row cycle time32 ns
Refresh row cycle time32 ns
Row active timeY
Width2.74"
Depth0.146"
Height1.18"
JEDEC standardY
Lead platingGold
Doesn't containHalogen
Programming power voltage (VPP)2.5 V
Design
CertificationUL 94 V-0
Technical details
Sustainability certificatesRoHS
Features
Internal memory16 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
CAS latency19
Memory voltage1.2 V
Memory layout (modules x size)1 x 16 GB
Memory ranking2
Linux operating systems supportedY
Module configuration2048M x 64
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
System requirements
Windows operating systems supportedY
Mac operating systems supportedY
Product tags
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