Kingston Technology KSM32ES8/8HD memory module 8 GB 1 x 8 GB DDR4 3200 MHz ECC1

Kingston Technology KSM32ES8/8HD memory module 8 GB 1 x 8 GB DDR4 3200 MHz ECC

Kingston Technology KSM32ES8/8HD. Component for: PC/server, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 3200 MHz, Memory form factor: 288-pin DIMM, CAS latency: 22, ECC

Manufacturer: Kingston Technology

SKU: 5950286

Manufacturer part number: KSM32ES8/8HD

UPC: 0740617312218

MSRP: $50.00

Price: $39.60

Qty:

Kingston's KSM32ES8/8HD is a 1G x 72-bit (8GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM), 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers.

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Products specifications

Attribute name	Attribute value
Height	1.23"
Country of Origin	Taiwan
Width	5.25"
JEDEC standard	Y
Doesn't contain	Halogen
Harmonized System (HS) code	84733020
Row cycle time	45.75 ns
Refresh row cycle time	350 ns
Row active time	32 ns
SPD profile	Y
Technical details
Sustainability certificates	RoHS
Features
Internal memory	8 GB
Internal memory type	DDR4
Memory clock speed	3200 MHz
Component for	PC/server
Memory form factor	288-pin DIMM
ECC	Y
Buffered memory type	Registered (buffered)
CAS latency	22
Memory voltage	1.2 V
Memory layout (modules x size)	1 x 8 GB
Memory ranking	1
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C

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Products specifications

Attribute name	Attribute value
Height	1.23"
Country of Origin	Taiwan
Width	5.25"
JEDEC standard	Y
Doesn't contain	Halogen
Harmonized System (HS) code	84733020
Row cycle time	45.75 ns
Refresh row cycle time	350 ns
Row active time	32 ns
SPD profile	Y
Technical details
Sustainability certificates	RoHS
Features
Internal memory	8 GB
Internal memory type	DDR4
Memory clock speed	3200 MHz
Component for	PC/server
Memory form factor	288-pin DIMM
ECC	Y
Buffered memory type	Registered (buffered)
CAS latency	22
Memory voltage	1.2 V
Memory layout (modules x size)	1 x 8 GB
Memory ranking	1
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C

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