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Kingston Technology KSM26SES8/8MR memory module 8 GB DDR4 2666 MHz ECC1
Kingston Technology KSM26SES8/8MR memory module 8 GB DDR4 2666 MHz ECC1 Kingston Technology KSM26SES8/8MR memory module 8 GB DDR4 2666 MHz ECC2

Kingston Technology KSM26SES8/8MR memory module 8 GB DDR4 2666 MHz ECC

Kingston Technology KSM26SES8/8MR. Internal memory: 8 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19, ECC
Manufacturer: Kingston Technology
SKU: 6466194
Manufacturer part number: KSM26SES8/8MR
UPC: 0740617325782
MSRP: $50.00
$40.27
Kingston's KSM26SES8/8MR is a 1G x 72-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.
Kingston's KSM26SES8/8MR is a 1G x 72-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.
Products specifications
Attribute nameAttribute value
JEDEC standardY
BacklightN
Harmonized System (HS) code84733020
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
SPD profileY
Programming power voltage (VPP)2.5 V
On-Die ECCY
Technical details
Sustainability certificatesRoHS
Features
Internal memory8 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Memory form factor260-pin SO-DIMM
ECCY
Buffered memory typeUnregistered (unbuffered)
CAS latency19
Memory voltage1.2 V
Memory ranking1
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Data transmission
Supported data transfer ratesPC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
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Products specifications
Attribute nameAttribute value
JEDEC standardY
BacklightN
Harmonized System (HS) code84733020
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
SPD profileY
Programming power voltage (VPP)2.5 V
On-Die ECCY
Technical details
Sustainability certificatesRoHS
Features
Internal memory8 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Memory form factor260-pin SO-DIMM
ECCY
Buffered memory typeUnregistered (unbuffered)
CAS latency19
Memory voltage1.2 V
Memory ranking1
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Data transmission
Supported data transfer ratesPC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
Product tags
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