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Kingston Technology KSM26SES8/8HD memory module 8 GB 1 x 8 GB DDR4 2666 MHz ECC1
Kingston Technology KSM26SES8/8HD memory module 8 GB 1 x 8 GB DDR4 2666 MHz ECC1 Kingston Technology KSM26SES8/8HD memory module 8 GB 1 x 8 GB DDR4 2666 MHz ECC2

Kingston Technology KSM26SES8/8HD memory module 8 GB 1 x 8 GB DDR4 2666 MHz ECC

Kingston Technology KSM26SES8/8HD. Component for: Notebook, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 21, ECC
Manufacturer: Kingston Technology
SKU: 5950280
Manufacturer part number: KSM26SES8/8HD
UPC: 0740617312119
MSRP: $50.00
$39.53
Kingston's KSM26SES8/8HD is a 1G x 72-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.
Kingston's KSM26SES8/8HD is a 1G x 72-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.
Products specifications
Attribute nameAttribute value
Width2.74"
Height1.18"
Harmonized System (HS) code84733020
SPD profileY
Technical details
Sustainability certificatesRoHS
Features
Internal memory8 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
ECCY
Buffered memory typeUnregistered (unbuffered)
CAS latency21
Memory voltage1.2 V
Memory layout (modules x size)1 x 8 GB
Memory ranking1
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
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Products specifications
Attribute nameAttribute value
Width2.74"
Height1.18"
Harmonized System (HS) code84733020
SPD profileY
Technical details
Sustainability certificatesRoHS
Features
Internal memory8 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
ECCY
Buffered memory typeUnregistered (unbuffered)
CAS latency21
Memory voltage1.2 V
Memory layout (modules x size)1 x 8 GB
Memory ranking1
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Product tags
  • (60987)
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